July 18, 2018
Total ionizing dose testing of commercial 200 V PMOSFETs. At 100 kRad(Si), observed VT increase of ~ 3 V for biased ON devices and increase of ~ 1 V for biased OFF devices. The RDS_ON did not degrade with dose.
July 17, 2026
Zilin Xiao, Qi Ma, Jason Chen, Xintao Chen, Avinash Atreya, Hanjie Chen, Vicente Ordonez
July 17, 2026
July 13, 2026
Xiaodong Wang, Xuanyi Zhao, Pedro Rodriguez, Devendra Singh Sachan, Barlas Oguz, Seungwhan Moon, Shang-Wen Li, Gargi Ghosh, Xin Dong, Wen-Tau Yih
July 13, 2026
July 03, 2026
Sonia Joseph, Quentin Garrido, Randall Balestriero, Matthew Kowal, Thomas Fel, Shahab Bakhtiari, Blake Richards, Mike Rabbat
July 03, 2026
June 05, 2026
Zeyu Yang, Qi Ma, Jason Chen, Anshumali Shrivastava
June 05, 2026
October 31, 2019
Peng-Jen Chen, Jiajun Shen, Matt Le, Vishrav Chaudhary, Ahmed El-Kishky, Guillaume Wenzek, Myle Ott, Marc’Aurelio Ranzato
October 31, 2019
October 27, 2019
Zhuoyuan Chen, Demi Guo, Tong Xiao, Saining Xie, Xinlei Chen, Haonan Yu, Jonathan Gray, Kavya Srinet, Haoqi Fan, Jerry Ma, Charles R. Qi, Shubham Tulsiani, Arthur Szlam, Larry Zitnick
October 27, 2019
April 25, 2020
Yilun Du, Joshua Meier, Jerry Ma, Rob Fergus, Alexander Rives
April 25, 2020
June 11, 2019
Yuandong Tian, Jerry Ma, Qucheng Gong, Shubho Sengupta, Zhuoyuan Chen, James Pinkerton, Larry Zitnick
June 11, 2019
