July 18, 2018
Total ionizing dose testing of commercial 200 V PMOSFETs. At 100 kRad(Si), observed VT increase of ~ 3 V for biased ON devices and increase of ~ 1 V for biased OFF devices. The RDS_ON did not degrade with dose.
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Nicolas Ballas, Bernhard Schölkopf, Chris Pal, Francesco Locatello, Li Erran, Martin Weiss, Nasim Rahaman, Yoshua Bengio
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Andrea Tirinzoni, Aymen Al Marjani, Emilie Kaufmann
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Kushal Tirumala, Aram H. Markosyan, Armen Aghajanyan, Luke Zettlemoyer
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Unnat Jain, Abhinav Gupta, Himangi Mittal, Pedro Morgado
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April 08, 2021
Caner Hazirbas, Joanna Bitton, Brian Dolhansky, Jacqueline Pan, Albert Gordo, Cristian Canton Ferrer
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Tomer Galanti, Lior Wolf, Sagie Benaim
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April 30, 2018
Yedid Hoshen, Lior Wolf
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Eliya Nachmani, Lior Wolf
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